.-- i _-- -em an amp company linear power transistor, 40w 850 - 1450 mhz features l npn silicon microwave power transistor l common emitter configuration l broadband class ab operation l interdigitated geometry l diffused emitter ballasting resistors l gold metalization system l internal input and output impedance matching l hermetic metal/ceramic package absolute?tiaximum ratinas at 25c i parameter / symbol ( rating 1 units 1 1 collector-basevoltage ( v,,, 1 56 i v i collector-emitter voltage emitter-base voltage collector current (peak) v es 56 v v ebo 3.0 v ?c 5.6 a total power dissipation junction temperature storage temperature p to: 175 w tj 200 ?c t st0 -55 to +200 ?c thermal resistance 8 jc 1.0 electrical characteristics at 25c ?cl-w it .060?.002 f (1521.05) unless ct-iervise noted. tclerances are :nch~:s zoo5 :m!, liheters t,13mm, - i parameter ( symbol 1 min 1 max 1 units 1 test conditions collector-emitter breakdown voltage collector-emitter leakage current collector-base breakdown voltage bv,,, 56 - v i,=50 ma ices 5.0 ma v,,=2a v bv,,, 56 - v i,=50 ma emitter-base breakdown voltage bvebo 3.0 - v i,=1 0 ma dc forward current gain h fe 15 100 - v,,=5.0 v, 1,=0.5 a input power p ,n 5.5 8.8 w v,,=28 v, i,,=12 ma, po,,=42 w, f=1450 mhz collectorcurrent ?c - 3.75 a v,,=28 v, i& 2 ma, po,?42 w, f=l450 mhz input return loss rl saturated output power p st load mismatch tolerance vswr-t - load mismatch tolerance vswr-t - typical optimum device impedances f(mhz) z,(n) 850 2.0 - j3.6 950 2.4 - j2.5 1050 3.1 - il.8 1150 3.5 - il.9 1250 3.3 - j2.4 1350 2.5 - j2.4 1.4 - j0.5 1450 1.7-j1.8 1.2-jo.l specifications subject to change without notice. 9-102 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. = europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
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